Anisotropic multi-spot DBR porous silicon chip for the detection of human immunoglobin G.

Anisotropic multi-spot DBR porous silicon chip for the detection of human immunoglobin G.

Journal of nanoscience and nanotechnology (2014-04-25)

Bomin Cho, Sungyong Um, Honglae Sohn

ABSTRACT

Asymmetric porous silicon multilayer (APSM)-based optical biosensor was developed to specify human Immunoglobin G (Ig G). APSM chip was generated by an electrochemical etching of silicon wafer using an asymmetric electrode configuration in aqueous ethanolic HF solution and constituted with nine arrayed porous silicon multilayer. APSM prepared from anisotropic etching conditions displayed a sharp reflection resonance in the reflectivity spectrum. Each spot displayed single reflection resonance at different wavelengths as a function of the lateral distance from the Pt counter electrode. The sensor system was consisted of the 3 x 3 spot array of APSM modified with protein A. The system was probed with an aqueous human Ig G. Molecular binding and specificity was monitored as a shift in wavelength of reflection resonance.

MATERIALS

Product Number

Brand

Product Description

647101

Sigma-Aldrich

Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

647799

Sigma-Aldrich

Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

647772

Sigma-Aldrich

Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647675

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

647705

Sigma-Aldrich

Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

647543

Sigma-Aldrich

Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

647802

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

633097

Sigma-Aldrich

Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

646687

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

647535

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

343250

Sigma-Aldrich

Silicon, pieces, 99.95% trace metals basis

215619

Sigma-Aldrich

Silicon, powder, −325 mesh, 99% trace metals basis

GF37993595

Silicon, rod, 100mm, diameter 10.0mm, single crystal - random orientation, 100%

GF91141792

Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%

GF70438518

Silicon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%

GF71817543

Silicon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%

647764

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647780

Sigma-Aldrich

Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm