Skip to Content
Merck
All Photos(3)

Documents

203351

Sigma-Aldrich

Germanium

powder, −100 mesh, ≥99.99% trace metals basis

Sign Into View Organizational & Contract Pricing
All Photos(3)

About This Item

Empirical Formula (Hill Notation):
Ge
CAS Number:
7440-56-4
Molecular Weight:
72.64
EC Number:
231-164-3
MDL number:
MFCD00085310
UNSPSC Code:
12141716
PubChem Substance ID:
24852165
NACRES:
NA.23

Quality Level

100

Assay

≥99.99% trace metals basis

form

powder

resistivity

53 Ω-cm, 20°C

particle size

−100 mesh

bp

2830 °C (lit.)

mp

937 °C (lit.)

density

5.35 g/mL at 25 °C (lit.)

SMILES string

[Ge]

InChI

1S/Ge

InChI key

GNPVGFCGXDBREM-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

Signal Word

Danger

Hazard Statements

H228,H361,H373,H410

Hazard Classifications

Aquatic Acute 1 - Aquatic Chronic 2 - Flam. Sol. 1 - Repr. 2 - STOT RE 2 Oral

Target Organs

Kidney

Storage Class Code

4.1B - Flammable solid hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Customers Also Viewed

Slide 1 of 2

1 of 2

Germanium(IV) oxide ≥99.99% trace metals basis

Sigma-Aldrich

483702

Germanium(IV) oxide

Selenium powder, −100 mesh, 99.99% trace metals basis

Sigma-Aldrich

229865

Selenium

Lu Dai et al.
Nanoscale, 5(3), 971-976 (2012-12-15)
The controllable fabrication of self-scrolling SiGe/Si/Cr helical nanoribbons on Si(111) substrates is investigated. The initial lateral etching profile of the Si(111) substrates shows a 2-fold rotational symmetry using 4% ammonia solution, which provides guidance for initial scrolling of one-end-fixed nanoribbons
W Streyer et al.
Optics express, 21(7), 9113-9122 (2013-04-11)
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of
Maurizio Mattesini et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035601-035601 (2012-12-12)
The magnetic properties, electronic band structure and Fermi surfaces of the hexagonal Cr(2)GeC system have been studied by means of both generalized gradient approximation (GGA) and the +U corrected method (GGA + U). The effective U value has been computed within the
Jin Liu et al.
Dalton transactions (Cambridge, England : 2003), 42(14), 5092-5099 (2013-02-13)
In this study, Zn2GeO4 hollow spheres were successfully fabricated by a template-engaged approach using zinc hydroxide carbonate (Zn4CO3(OH)6·H2O, ZHC) spheres as the template. During the hydrothermal process, Zn(2+) dissolved from the surface of the ZHC spheres could rapidly react with
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in
View All Related Papers

Articles

Working with Reactive, Volatile, Complex Materials to Produce Novel Alloys

Technologies are an integral part of our lives and we rely on them for such things as communication, heating and cooling, transportation, and construction. Improvements to technologies have made what they do for us more precise, automated, efficient, and powerful.

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service