蒸汽壓力
<0.01 mmHg ( 537.2 °C)
化驗
99.90%
形狀
foil
自燃溫度
572 °F
製造商／商標名
Goodfellow 157-311-86
電阻係數
13.5 μΩ-cm, 20°C
尺寸 × 厚度
25 x 25 mm × 0.01 mm
bp
5425 °C (lit.)
mp
2996 °C (lit.)
密度
16.69 g/cm3 (lit.)
SMILES 字串
[Ta]
InChI
1S/Ta
InChI 密鑰
GUVRBAGPIYLISA-UHFFFAOYSA-N
一般說明
For updated SDS information please visit www.goodfellow.com.
法律資訊
Product of Goodfellow
Yingxun Du et al.
Journal of hazardous materials, 225-226, 21-27 (2012-05-23)
In order to overcome the limitation of the application of nanoparticles, tantalum (oxy)nitrides nanotube arrays on a Ta foil were synthesized and introduced in vis (visible light)-Fenton-like system to enhance the degradation of atrazine. At first, the anodization of tantalum
Zhongli Cai et al.
The journal of physical chemistry. B, 109(10), 4796-4800 (2006-07-21)
Both monolayer and thick (20 microm) films of dry pGEM-3Zf(-) plasmid DNA deposited on tantalum foil were exposed to Al Kalpha X-rays (1.5 keV) for various times in an ultrahigh vacuum chamber. For monolayer DNA, the damage was induced mainly
J G Sen Gupta
Talanta, 31(12), 1053-1056 (1984-12-01)
A 40-fold increase in sensitivity obtained by using a tantalum foil lining in a pyrolytically-coated graphite furnace permitted determination of low ppm levels of cerium in most silicate rocks. A preliminary preconcentration by oxalate and hydroxide co-precipitations was used before
Zhongli Cai et al.
Radiation research, 165(3), 365-371 (2006-02-24)
Both thick and thin films of pGEMR-3Zf- plasmid DNA deposited on a tantalum foil were exposed to soft X rays (effective energy of 14.8 keV) for various times in air under a relative humidity of 45% (Gamma approximately 6, where
J G Sen Gupta
Talanta, 32(1), 1-6 (1985-01-01)
An improved graphite furnace atomic-absorption method has been developed for the determination of Sc, Y and the rare-earth elements in silicate rocks and related materials. The method, which involves the separation of the lanthanides by ion-exchange followed by their determination
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系技术服务部门